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Bychkov-Rashba splitting in inversion layers on heavily-doped p-HgCdTe. / Radantsev, V. F.; Kulaev, G. I.; Kruzhaev, V. V.
International Journal of Nanoscience, Vol 2, No 6. ed. / RA Suris. World Scientific Publishing Co., 2003. p. 419-425 (International Journal of Nanoscience Series; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Harvard

Radantsev, VF, Kulaev, GI & Kruzhaev, VV 2003, Bychkov-Rashba splitting in inversion layers on heavily-doped p-HgCdTe. in RA Suris (ed.), International Journal of Nanoscience, Vol 2, No 6. International Journal of Nanoscience Series, vol. 2, World Scientific Publishing Co., pp. 419-425, 11th International Symposium on Nanostructures - Physics and Technology, St Petersburg, 23/06/2003. https://doi.org/10.1142/S0219581X03001516

APA

Radantsev, V. F., Kulaev, G. I., & Kruzhaev, V. V. (2003). Bychkov-Rashba splitting in inversion layers on heavily-doped p-HgCdTe. In RA. Suris (Ed.), International Journal of Nanoscience, Vol 2, No 6 (pp. 419-425). (International Journal of Nanoscience Series; Vol. 2). World Scientific Publishing Co.. https://doi.org/10.1142/S0219581X03001516

Vancouver

Radantsev VF, Kulaev GI, Kruzhaev VV. Bychkov-Rashba splitting in inversion layers on heavily-doped p-HgCdTe. In Suris RA, editor, International Journal of Nanoscience, Vol 2, No 6. World Scientific Publishing Co. 2003. p. 419-425. (International Journal of Nanoscience Series). doi: 10.1142/S0219581X03001516

Author

Radantsev, V. F. ; Kulaev, G. I. ; Kruzhaev, V. V. / Bychkov-Rashba splitting in inversion layers on heavily-doped p-HgCdTe. International Journal of Nanoscience, Vol 2, No 6. editor / RA Suris. World Scientific Publishing Co., 2003. pp. 419-425 (International Journal of Nanoscience Series).

BibTeX

@inproceedings{36bba6e788964531bb2130e5cf3a8aa2,
title = "Bychkov-Rashba splitting in inversion layers on heavily-doped p-HgCdTe",
keywords = "spintronic, rashba effect, narrow-gap and zero-gap semiconductors",
author = "Radantsev, {V. F.} and Kulaev, {G. I.} and Kruzhaev, {V. V.}",
year = "2003",
doi = "10.1142/S0219581X03001516",
language = "English",
series = "International Journal of Nanoscience Series",
publisher = "World Scientific Publishing Co.",
pages = "419--425",
editor = "RA Suris",
booktitle = "International Journal of Nanoscience, Vol 2, No 6",
address = "Singapore",
note = "11th International Symposium on Nanostructures - Physics and Technology ; Conference date: 23-06-2003 Through 28-06-2003",

}

RIS

TY - GEN

T1 - Bychkov-Rashba splitting in inversion layers on heavily-doped p-HgCdTe

AU - Radantsev, V. F.

AU - Kulaev, G. I.

AU - Kruzhaev, V. V.

PY - 2003

Y1 - 2003

KW - spintronic

KW - rashba effect

KW - narrow-gap and zero-gap semiconductors

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000245879000005

U2 - 10.1142/S0219581X03001516

DO - 10.1142/S0219581X03001516

M3 - Conference contribution

T3 - International Journal of Nanoscience Series

SP - 419

EP - 425

BT - International Journal of Nanoscience, Vol 2, No 6

A2 - Suris, RA

PB - World Scientific Publishing Co.

T2 - 11th International Symposium on Nanostructures - Physics and Technology

Y2 - 23 June 2003 through 28 June 2003

ER -

ID: 7213674