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ACCEPTOR ENERGY AND CHARACTERISTICS OF THE MOTT TRANSITION IN P-TYPE INSB SUBJECTED TO UNIAXIAL DEFORMATION
Research output
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Contribution to journal
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peer-review
Department of Condensed Matter Physics and Nanoscale Systems
Section of Optoelectronics and Semiconductor Technology
Institute of Natural Sciences and Mathematics
Overview
Cite this
A. V. Germanenko
G. M. Minkov
O. E. Rut
Original language
English
Pages (from-to)
1216-1220
Number of pages
5
Journal
Semiconductors
Volume
21
Issue number
11
Publication status
Published -
Nov 1987
WoS ResearchAreas Categories
Physics, Condensed Matter
ID: 8791639