FIELD: chemistry.
SUBSTANCE: installation for producing dispersed aluminium nitride includes a three-section reaction chamber with a cylindrical casing made of a heat-resistant material, the inner surface of which is lined with aluminium nitride, and a heating device to create a temperature gradient along the reaction chamber. The lower 1 section is equipped with a perforated partition and a pipeline 5 for supplying argon. The lower 1 and middle 2 sections are separated by a partition 6 with an aperture. In the middle 2 sections, partitions 7 and 8 are installed. The outer surface of the partition 7 is screwed or threaded. The middle 2 and upper 3 sections are separated by a filter 11 made of carbon fibre or porous ceramic material. The nitrogen-containing gas supply means 9 is connected to the middle 2 sections through a rotameter, and the gas discharging means 12 - to the upper section 3. The lower 1 section is loaded with metallic aluminium and aluminium fluoride (III), gaseous aluminium fluoride (I) is produced at a temperature of more than 1100°C by sparging with gaseous aluminium fluoride (III) of the metallic aluminium melt. Then, the resulting gaseous aluminium fluoride (I) reacts with nitrogen containing gases supplied through the means 9. Dispersed aluminium nitride is produced by creating a swirling flow of a mixture of aluminium fluoride (I) with nitrogen-containing gases using a screw cutting partition 7. The resulting dispersed aluminium nitride and aluminium fluoride (III) are separately deposited by filtration through the filter 11. The gaseous products are withdrawn through the means 12.
EFFECT: production of dispersed aluminium nitride with a purity of up to 99,9% and a fraction up to 10 nm, while increasing the yield of the final product.