FIELD: photosensitive materials; microelectronic devices; energy storage. SUBSTANCE: production of solid silicon deposits for use as photosensitive materials, microelectronic devices and energy storage. Method of electrodeposition of solid silicon deposits from molten salts includes electrolysis in an inert atmosphere of a halide melt from a mixture of salts, wt.%: 15-45 potassium chloride (KCl), 50-80 cesium chloride (CsCl), 0.5-20 potassium hexafluorosilicate (K₂SiF₆). The electrolysis of the melt is carried out at a temperature of 620 to 650°C in a pulsed potentiostatic mode with repeated periodic application of a cathode overvoltage to the working electrode with a value of 0.05 to 0.30 V for a duration of 2 to 100 ms. EFFECT: obtaining solid silicon deposits while reducing the temperature and chemical aggressiveness of the molten electrolyte, increasing the stability of silicon-containing electroactive ions in the melt. 1 cl, 2 dwg, 1 ex.