FIELD: semiconductor materials science. SUBSTANCE: invention relates to the field of semiconductor materials science and can be used in optoelectronic products operating in the near infrared region of the spectrum, laser and sensor technology. The method for producing photosensitive lead sulfide films on dielectric substrates consists in adding a nickel salt with a concentration of 0.0005-0.004 mol/l while reducing the content of ammonium iodide in the reaction mixture to 0.15 mol/l. EFFECT: invention provides an increase in the photosensitive properties of lead sulfide films. 1 cl, 1 dwg, 8 ex.
Translated title of the contributionMethod for Producing Photo-Sensitive Lead Sulfide Films: patent of invention
Original languageRussian
Patent number2783294
IPCH01L 21/208,H01L 31/18
Priority date16/02/2022
Filing date16/02/2022
Publication statusPublished - 11 Nov 2022

ID: 46673238