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  1. 1993

  2. Spin-dependent tunnelling in metal-insulator-gapless semiconductor structures in a magnetic field

    Germanenko, A. V., Kruzhaev, V. V., Minkov, G. M., Rumyantsev, E. L. & Rut, O. E., Mar 1993, In: Semiconductor Science and Technology. 8, 3, p. 383-387 5 p.

    Research output: Contribution to journal › Article › peer-review

  3. 1992

  4. LANGMUIR-BLODGETT-FILM AS AN INSULATOR IN AN MIS TRANSISTOR MADE FROM CDXHG1-XTE

    Germanenko, A. V., Larionova, V. A., Minkov, G. M. & Rut, O. E., Dec 1992, In: Semiconductors. 26, 12, p. 1199-1200 2 p.

    Research output: Contribution to journal › Comment/debate › peer-review

  5. Acceptor states in the dilute magnetic semiconductor p-HgMnTe with Eg > 0 under uniaxial stress

    Germanenko, A. V., Min'kov, G. M. & Rut, O. E., 2 Feb 1992, In: Journal of Crystal Growth. 117, 1-4, p. 850-853 4 p.

    Research output: Contribution to journal › Article › peer-review

  6. The Conductivity Anisotropy in Uniaxially Stressed p‐InSb

    Germanenko, A. V., Minkov, G. M. & Rut, O. E., 1 Jan 1992, In: physica status solidi (b). 171, 1, p. 159-165 7 p.

    Research output: Contribution to journal › Article › peer-review

  7. 1990

  8. The hopping conductivity anisotropy in single valley n-Ge:Sb

    Germanenko, A. V., Min'kov, G. M., Rumyantsev, E. L. & Rut, O. E., 1 Jan 1990, In: Solid State Communications. 76, 9, p. 1149-1151 3 p.

    Research output: Contribution to journal › Article › peer-review

  9. The influence of uniaxial stress on the hopping conductivity in p-InSb. The anisotropy of the hopping conductivity

    Germanenko, A. V. & Min'kov, G. M., 1 Jan 1990, In: Solid State Communications. 74, 7, p. 649-653 5 p.

    Research output: Contribution to journal › Article › peer-review

  10. SEMICONDUCTOR-SEMIMETAL TRANSITIONS INDUCED BY MAGNETIC-FIELD IN GAPLESS HGMNTE UNDER UNIAXIAL-STRESS

    Germanenko, A. V., Minkov, G. M., Rut, O. E. & Rumyantsev, E. L., 1990, 20TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, VOLS 1-3. Anastassakis, EM. & Joannopoulos, JD. (eds.). World Scientific Publishing Co., p. 1791-1794 4 p.

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

  11. 1989

  12. UNIAXIALLY DEFORMED P-TYPE HGMNTE WITH EPSILON-G GREATER-THAN O - GALVANOMAGNETIC EFFECTS, ENERGY-SPECTRUM

    Germanenko, A. V., Minkov, G. M., Rumyantsev, E. L. & Rut, O. E., Dec 1989, In: Semiconductors. 23, 12, p. 1355-1359 5 p.

    Research output: Contribution to journal › Article › peer-review

  13. TRANSPORT EFFECTS IN UNIAXIALLY DEFORMED P-TYPE HG1-XCDXTE WITH EG GREATER-THAN 0

    Germanenko, A. V., Minkov, G. M., Rumyantsev, E. L. & Rut, O. E., May 1989, In: Semiconductors. 23, 5, p. 500-505 6 p.

    Research output: Contribution to journal › Article › peer-review

  14. INFLUENCE OF UNIAXIAL DEFORMATION ON THE ENERGY-SPECTRUM AND GALAVANOMAGNETIC EFFECTS IN ZERO-GAP P-TYPE HGMNTE

    Germanenko, A. V., Minkov, G. M., Rumyantsev, E. L., Rut, O. E., Gavaleshko, N. P. & Frasunyak, V. M., Jan 1989, In: Semiconductors. 23, 1, p. 71-75 5 p.

    Research output: Contribution to journal › Article › peer-review

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