1. 1995
  2. Two-dimensional states at the HgTe/Hg0.05Cd0.95Te interface as determined from the tunneling investigations

    Germanenko, A. V., Minkov, G. M., Larionova, V. A., Rut, O. E., Becker, C. R. & Landwehr, G., 1 Jan 1995, In: Physical Review B. 52, 24, p. 17254-17259 6 p.

    Research output: Contribution to journalArticlepeer-review

  3. 1994
  4. TUNNEL SPECTROSCOPY OF 2-DIMENSIONAL SURFACE-STATES IN GAP-FREE P-HGCDTE

    Minkov, G. M., Rut, O. E., Larionova, V. A. & Germanenko, A. V., Mar 1994, In: Журнал экспериментальной и теоретической физики. 105, 3, p. 719-738 20 p.

    Research output: Contribution to journalArticlepeer-review

  5. Peculiarities of the quantisation of the energy spectrum of gapless semiconductors in a magnetic field under space confinement

    Germanenko, A. V., Minkov, G. M., Rumyantsev, E. L. & Rut, O. E., 1 Jan 1994, In: Advanced Functional Materials. 3, 1-6, p. 57-65 9 p.

    Research output: Contribution to journalArticlepeer-review

  6. Spin‐polarised tunnelling current in metal–insulator–gapless semiconductor structures in a magnetic field

    Germanenko, A. V., Kruzhaev, V. V., Minkov, G. M., Rumyantsev, E. L. & Rut, O. E., 1 Jan 1994, In: Advanced Functional Materials. 3, 1-6, p. 127-130 4 p.

    Research output: Contribution to journalArticlepeer-review

  7. 1993
  8. Energy spectrum of a gapless semiconductor in a longitudinal magnetic field under spatial confinement

    Germanenko, A. V., Minkov, G. M., Rumyantsev, E. L. & Rut, O. E., 1 Dec 1993, In: Semiconductor Science and Technology. 8, 3, p. 388-393 6 p., 014.

    Research output: Contribution to journalArticlepeer-review

  9. Spin-dependent tunnelling in metal-insulator-gapless semiconductor structures in a magnetic field

    Germanenko, A. V., Kruzhaev, V. V., Minkov, G. M., Rumyantsev, E. L. & Rut, O. E., Mar 1993, In: Semiconductor Science and Technology. 8, 3, p. 383-387 5 p.

    Research output: Contribution to journalArticlepeer-review

  10. 1992
  11. LANGMUIR-BLODGETT-FILM AS AN INSULATOR IN AN MIS TRANSISTOR MADE FROM CDXHG1-XTE

    Germanenko, A. V., Larionova, V. A., Minkov, G. M. & Rut, O. E., Dec 1992, In: Semiconductors. 26, 12, p. 1199-1200 2 p.

    Research output: Contribution to journalComment/debatepeer-review

  12. Acceptor states in the dilute magnetic semiconductor p-HgMnTe with Eg > 0 under uniaxial stress

    Germanenko, A. V., Min'kov, G. M. & Rut, O. E., 2 Feb 1992, In: Journal of Crystal Growth. 117, 1-4, p. 850-853 4 p.

    Research output: Contribution to journalArticlepeer-review

  13. The Conductivity Anisotropy in Uniaxially Stressed p‐InSb

    Germanenko, A. V., Minkov, G. M. & Rut, O. E., 1 Jan 1992, In: physica status solidi (b). 171, 1, p. 159-165 7 p.

    Research output: Contribution to journalArticlepeer-review

  14. 1990
  15. The hopping conductivity anisotropy in single valley n-Ge:Sb

    Germanenko, A. V., Min'kov, G. M., Rumyantsev, E. L. & Rut, O. E., 1 Jan 1990, In: Solid State Communications. 76, 9, p. 1149-1151 3 p.

    Research output: Contribution to journalArticlepeer-review

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