1. 2017
  2. A room-temperature-operated Si LED with β-FeSi2 nanocrystals in the active layer: μW emission power at 1.5 μm

    Shevlyagin, A. V., Goroshko, D. L., Chusovitin, E. A., Balagan, S. A., Dotcenko, S. A., Galkin, K. N., Galkin, N. G., Shamirzaev, T. S., Gutakovskii, A. K., Latyshev, A. V., Iinuma, M. & Terai, Y., 21 Mar 2017, In: Journal of Applied Physics. 121, 11, 113101.

    Research output: Contribution to journalArticlepeer-review

  3. Perovskite CH3NH3PbI3 crystals and films. Synthesis and characterization

    Semenova, O. I., Yudanova, E. S., Yeryukov, N. A., Zhivodkov, Y. A., Shamirzaev, T. S., Maximovskiy, E. A., Gromilov, S. A. & Troitskaia, I. B., 15 Mar 2017, In: Journal of Crystal Growth. 462, p. 45-49 5 p.

    Research output: Contribution to journalArticlepeer-review

  4. ЛЮМИНЕСЦЕНЦИЯ ПРИПОВЕРХНОСТНОГО ГЕТЕРОПЕРЕХОДА GAAS/ALAS В ГЕТЕРОСТРУКТУРАХ НА ОСНОВЕ ALAS

    Никифоров, В. Е., Абрамкин, Д. С. & Шамирзаев, Т. С., 2017, In: Физика и техника полупроводников. 51, 11, p. 1565-1568 4 p.

    Research output: Contribution to journalArticlepeer-review

  5. ОПРЕДЕЛЕНИЕ ТИПА ЭНЕРГЕТИЧЕСКОГО СТРОЕНИЯ ГЕТЕРОСТРУКТУР С ДИФФУЗИОННО-РАЗМЫТЫМИ ГРАНИЦАМИ

    Абрамкин, Д. С., Бакаров, А. К., Колотовкина, Д. А., Гутаковский, А. К. & Шамирзаев, Т. С., 2017, In: Известия Российской академии наук. Серия физическая. 81, 9, p. 1166-1172

    Research output: Contribution to journalArticlepeer-review

  6. ФОРМИРОВАНИЕ НИЗКОРАЗМЕРНЫХ СТРУКТУР В ГЕТЕРОСИСТЕМЕ INSB/ALAS

    Абрамкин, Д. С., Бакаров, А. К., ПУТЯТО, М. А., ЕМЕЛЬЯНОВ, Е. А., Колотовкина, Д. А., Гутаковский, А. К. & Шамирзаев, Т. С., 2017, In: Физика и техника полупроводников. 51, 9, p. 1282-1288

    Research output: Contribution to journalArticlepeer-review

  7. 2016
  8. Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes

    Shamirzaev, V. T., Gaisler, V. A. & Shamirzaev, T. S., Nov 2016, In: Semiconductors. 50, 11, p. 1493-1498 6 p.

    Research output: Contribution to journalArticlepeer-review

  9. Negative differential resistance in high-power InGaN/GaN laser diode

    Shamirzaev, V. T., Gaisler, V. A. & Shamirzaev, T. S., 1 Sept 2016, In: Optoelectronics, Instrumentation and Data Processing. 52, 5, p. 442-446 5 p.

    Research output: Contribution to journalArticlepeer-review

  10. Dynamics of exciton recombination in strong magnetic fields in ultrathin GaAs/AlAs quantum wells with indirect band gap and type-II band alignment

    Shamirzaev, T. S., Debus, J., Yakovlev, D. R., Glazov, M. M., Ivchenko, E. L. & Bayer, M., 8 Jul 2016, In: Physical Review B - Condensed Matter and Materials Physics. 94, 4, 10 p., 045411.

    Research output: Contribution to journalArticlepeer-review

  11. Quantum Dots Formed in InSb/AlAs and AlSb/AlAs Heterostructures

    Abramkin, D. S., Rumynin, K. M., Bakarov, A. K., Kolotovkina, D. A., Gutakovskii, A. K. & Shamirzaev, T. S., Jun 2016, In: JETP Letters. 103, 11, p. 692-698 7 p.

    Research output: Contribution to journalArticlepeer-review

  12. Treatment and optical analysis of domestic and industrial wastewater

    Shamirzaev, V. T., Zhukov, B. D., Gaisler, V. A. & Shamirzaev, T. S., 2016, Physics and Technology of Nanostructured Materials IV. Trans Tech Publications Ltd., Vol. 247 SSP. p. 91-95 5 p. (Solid State Phenomena; vol. 247 SSP).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

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